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Power Module : NXH80T120L2Q0PG PIM EBV ELEKTRONIK

Power Module : NXH80T120L2Q0PG PIM

Power supply, Converter, Regulator

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Integrating ON Semiconductor’s proprietary Trench Field Stop II IGBT technology along with rugged ultrafast fast recovery diodes, the NXH80T120L2Q0PG PIM module is configured in 1200 V, 80 A half-bridge and 600 V, 50 A neutral point clamp T-type topology, attaining efficiencies in excess of 98 percent.

The configurable package platform employs high-power direct-bonded-copper (DBC) substrate technology along with proprietary press-fit pins to provide customers with a high performance and reliable power module solutio

Extremely efficient trench IGBT with Field stop technology Module design offers high power density Low inductive layout Short circuit capability

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